Static and dynamic characterization of a GaN-on-GaN 600 V, 2 a vertical transistor
| Autor: | Ray Li, Christina DiMarino, Rolando Burgos, Mary Chen, Rongming Chu, Yu Cao, Amy Romero |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Schottky diode Gallium nitride 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry.chemical_compound chemistry law Logic gate 0103 physical sciences Breakdown voltage Optoelectronics Power semiconductor device 0210 nano-technology business Voltage Static induction transistor |
| Zdroj: | 2017 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: | 10.1109/ecce.2017.8095812 |
| Popis: | Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL's cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization which shows a breakdown voltage of 600 V, as well as the transfer characteristics, output characteristics, and the on-state resistance with respect to current. The device is then switched at various voltages and currents with voltage switching speeds up to 97 V/ns. The device is successfully switched up to 450 V under a 2 A load current. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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