Heterojunction vertical FETs revisited: potential for 225-GHz large-current operation
| Autor: | S.R. Weinzierl, J.P. Krusius |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Condensed matter physics business.industry Transconductance Transistor Monte Carlo method Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Field-effect transistor Transient (oscillation) Radio frequency Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 39:1050-1055 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.129081 |
| Popis: | The high-speed operation of submicrometer Al/sub x/Ga/sub 1-x/As/GaAs unipolar heterojunction transistors is examined using two-dimensional time-dependent self-consistent ensemble Monte Carlo simulation. Careful device design can significantly increase ballistic injection over the heterojunction in steady state by eliminating retarding gate-induced space-charge reversal there. Design for optimal large-signal transient operation must also avoid gate-voltage-dependent ballistic injection. General design principles for optimizing high-speed operation are proposed. The resulting VFETs show cutoff frequencies of 225 GHz at large drain currents at 300 K, with frequency-independent two-port y parameters. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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