H 2 O 2 : HF : C 4 O 6 H 6 ( Tartaric Acid ) : H 2 O Etching System for Chemical Polishing of GaSb
| Autor: | V. A. Mishournyi, I. E. Berishev, F. de Anda, J. Olvera, V. I. Vasilyev, N. D. Ilyinskaya |
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| Rok vydání: | 1995 |
| Předmět: |
Chemical substance
Materials science Renewable Energy Sustainability and the Environment Polishing Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Crystallography chemistry Etching (microfabrication) Materials Chemistry Electrochemistry Tartaric acid Nuclear chemistry |
| Zdroj: | Journal of The Electrochemical Society. 142:L189-L191 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2050040 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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