A vertical cavity light emitting InGaN quantum well heterostructure
| Autor: | Ilker Ozden, R. S. Kern, M. Diagne, Yoon-Kyu Song, F. A. Kish, H. Zhou, Arto V Nurmikko, Carrie Carter-Coman, Michael R. Krames, A. Vertikov |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor Physics::Optics Heterojunction Dielectric law.invention Semiconductor laser theory Condensed Matter::Materials Science Optics law Q factor Optical cavity Optoelectronics business Quantum well Light-emitting diode |
| Zdroj: | Applied Physics Letters. 74:3441-3443 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. |
| Databáze: | OpenAIRE |
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