HCS degradation of 5nm oxide high-voltage PLDMOS
| Autor: | E. Stein Von Kamienski, Ralf Rudolf, M. Rohner, C. Olk, Wolfgang Gustin, Stefano Aresu |
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| Rok vydání: | 2014 |
| Předmět: |
LDMOS
Materials science business.industry Oxide Electrical engineering Time-dependent gate oxide breakdown High voltage Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage chemistry.chemical_compound chemistry Gate oxide Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Hot-carrier injection Leakage (electronics) |
| Zdroj: | Microelectronics Reliability. 54:1883-1886 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2014.07.048 |
| Popis: | Hot carrier (HC) injection, inducing drain and gate leakage current increase in 5 nm oxide p-channel LDMOS transistors, is investigated. Devices with two different drain implants are studied. At low gate voltage ( V GS ) and high drain voltage ( V DS ), reduction of the ON-resistance ( R ON ) is observed. At stress times at which R ON almost reaches its constant level, an increase of the drain leakage in OFF state ( V DS = −60 V, V GS = 0 V) is observed. Longer stress time leads to increased gate leakage and in some cases oxide breakdown. In contrast to what was reported for devices with 25 nm gate oxide thickness, the threshold voltage of 5 nm gate oxide PLDMOS transistors does not drift. The experimental data can be fully explained by hot carrier injection and the oxide damage can be explained by two different and competing degradation mechanisms. By combining experimental data and TCAD simulations we are further capable to locate the hot spot of maximum oxide damage in the accumulation (Acc) region of the PLDMOS. |
| Databáze: | OpenAIRE |
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