Effect of Asi on the optical properties of Ga1−xInxAs/InP grown by molecular beam epitaxy
| Autor: | M. Wachter, J.M. Schneider, B. Marheineke, M. Schiefele, H. Heinecke, M. Hurich, M. Popp |
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| Rok vydání: | 1995 |
| Předmět: |
Low temperature photoluminescence
Range (particle radiation) Photoluminescence business.industry Band gap Analytical chemistry chemistry.chemical_element Heterojunction Condensed Matter Physics Inorganic Chemistry Optics chemistry Reflection spectrum Materials Chemistry business Indium Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 150:528-532 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(95)80267-g |
| Popis: | This report focuses on the effect of the As species and the V/III ratio on the optical properties of Ga 1-x In x As/InP grown by molecular beam epitaxy (MBE). The band gap energies of the layers were measured by low temperature photoluminescence (PL) while the indium contents x were determined by X-ray for samples in the investigated range of 0.50 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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