Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
| Autor: | Hajime Okumura, Yasushi Urakami, Satoru Takagi, Tomohisa Kato, Hiroyuki Kondo, Fusao Hirose, Miura Tomonori, Kazuma Eto |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Mechanical Engineering Doping Analytical chemistry Stacking chemistry.chemical_element Bulk crystal growth Condensed Matter Physics Nitrogen Crystallography chemistry Mechanics of Materials Aluminium Electrical resistivity and conductivity General Materials Science Sublimation (phase transition) Bulk crystal |
| Zdroj: | Materials Science Forum. :47-50 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.778-780.47 |
| Popis: | The nitrogen (N) and aluminum (Al) co-doped growth of n-type 4H-SiC bulk crystals were performed by sublimation method. In the co-doping growth, we achieved the lowest resistivity of 6.9mWcm, and we also confirmed phenomenon of stacking faults suppression in spite of high N concentration more than 8 x 1019cm-3. |
| Databáze: | OpenAIRE |
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