Autor:	K. Bala, S. Sugiura, S. Takedai, J. Hoepfner, B. El-Kareh, H. Tanimoto
Rok vydání:	2002
Předmět:	Materials science business.industry fungi food and beverages Insulator (electricity) Photoresist Ion implantation CMOS Resist MOSFET Optoelectronics Breakdown voltage business Electrical conductor
Zdroj:	Proceedings of 11th International Conference on Ion Implantation Technology.
DOI:	10.1109/iit.1996.586116
Popis:	Ion implantation can cause damage by accumulating charge on insulators and floating conductors. This paper describes test structures to study implant damage and summarizes experimental results obtained on charging photoresist and polysilicon structures of varying antenna ratios at different flood-gun conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c4a436c43f14c1ad86e36af4578c0c91 https://doi.org/10.1109/iit.1996.586116 Zobrazit plný text záznamu