Bandwidth simulations of 10 Gb/s avalanche photodiodes
| Autor: | M.A. Itzler, Jie Yao, S. Kwan, K.K. Loi, P. Baret |
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| Rok vydání: | 2002 |
| Předmět: |
Frequency response
Materials science Physics::Instrumentation and Detectors business.industry Bandwidth (signal processing) Avalanche photodiode Secondary electrons Design for manufacturability Gallium arsenide chemistry.chemical_compound Optics chemistry Indium phosphide Optoelectronics business Indium gallium arsenide |
| Zdroj: | LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242). |
| DOI: | 10.1109/leos.2001.969006 |
| Popis: | We have described numerical results of a high-bandwidth design of an InGaAs/InP APD without sacrifice in reliability and manufacturability. A thinner multiplication layer reduces avalanche time, and the optimised absorption layer thickness manages the speed trade-off between (i) the high avalanche gain required of a thin absorption layer and (ii) the hole and secondary electron transit times of a thick absorption layer. One-dimensional simulation suggests the possibility of good control of edge breakdown with an optimized design. Substantial further improvement in bandwidth is likely to require alternate design approaches such as a different material (e.g., Si or InAlAs) for the multiplication region and/or an optical waveguide structure. |
| Databáze: | OpenAIRE |
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