Laser‐modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates
| Autor: | Timothy D. Harris, Vincent M. Donnelly, F. A. Baiocchi, V. R. McCrary, Charles W. Tu, J. C. Beggy, M. G. Lamont |
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| Rok vydání: | 1988 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Excimer laser Condensed Matter::Other medicine.medical_treatment Analytical chemistry Physics::Optics Crystal growth Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Epitaxy law.invention Condensed Matter::Materials Science law medicine Physics::Atomic Physics Thin film Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 52:966-968 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.99243 |
| Popis: | We report results on the effect of a 193 nm ArF excimer laser on molecular beam epitaxial growth of (Al)GaAs on GaAs substrates and GaAs on lattice‐matched (Ca,Sr)F2/GaAs heterostructures. For growth on GaAs substrates, regions exposed to the laser show photoluminescence and excellent channeling as determined by Rutherford backscattering spectroscopy, whereas regions outside the laser show no photoluminescence. For growth on (Ca,Sr)F2 surfaces, laser irradiation inhibits the growth of GaAs for fluences above a critical value of 0.12 J/cm2 pulse because of laser‐induced desorption of absorbed Ga atoms, which are relatively weakly bound to (Ca,Sr)F2, compared to GaAs surfaces. |
| Databáze: | OpenAIRE |
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