A Base-Collector Architecture for SiGe HBTs using Low-Temperature CVD Epitaxy Combined with Chemical-Mechanical Polishing
| Autor: | Markus Forsberg, Erdal Suvar, Yong-Bin Wang, J.V. Grahn, Erik Haralson, Henry H. Radamson |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Silicon Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Bipolar junction transistor chemistry.chemical_element Polishing Chemical vapor deposition Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics chemistry Chemical-mechanical planarization Optoelectronics business Mathematical Physics |
| Zdroj: | Physica Scripta. :64 |
| ISSN: | 0031-8949 |
| Popis: | A new collector technology intended for an integrated high-speed SiGe heterojunction bipolar transistor (HBT) is reported. The collector was fabricated by selective epitaxial growth (SEG) using chemical vapor deposition at 770?C under reduced pressure (20?torr) using SiH2Cl2 as silicon precursor and PH3 as n-type dopant source. Chemical-mechanical polishing (CMP) was applied to the overgrown SEG collector in order to achieve a smooth surface in level with the surrounding oxide. Finally, a SiGe base doped with boron was deposited using non-selective epitaxial growth (NSEG) at 650?C. The topography of the collector is inspected after each process step by atomic force microscopy and the topography of the completed collector/base stack indicates that this structure is promising for fabrication of the emitter window. A further advantage with the CMP procedure is the elimination of phosphorous segregation as evidenced by secondary ion mass spectroscopy of the base-collector stack. |
| Databáze: | OpenAIRE |
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