Diffusion of intrinsic defects in dielectric and semiconductor crystals with impurities

Autor:	Yu. K. Danileiko, Kh. S. Bagdasarov, E. M. Akulenok, Aleksandr A Manenkov, T. P. Lebedeva
Rok vydání:	2002
Předmět:	Crystal Valence (chemistry) Annealing (metallurgy) Chemical physics Impurity Chemistry Doping Effective diffusion coefficient General Materials Science General Chemistry Dielectric Condensed Matter Physics Chemical reaction
Zdroj:	Crystallography Reports. 47:918-924
ISSN:	1562-689X 1063-7745
DOI:	10.1134/1.1523514
Popis:	This paper reports on the results of detailed theoretical investigations into the diffusion of intrinsic defects in impurity crystals doped with mixed-valence ions. The special case of diffusion stimulated by variations in the redox properties of the atmosphere at the crystal boundary during high-temperature annealing is analyzed. The major consideration is given to the following fundamental problems: (i) the dynamics of valence transitions and the structure of the chemical reaction zone, (ii) the possibility of determining the type of chemical reaction at the crystal-atmosphere interface and the type of diffusing defects, (iii) the effect of dilatation mechanical stresses arising in the reaction zone on the reaction-zone structure and on the dynamics of diffusion processes, and (iv) the determination of the diffusion parameters of intrinsic defects and the constants of their interaction with impurity centers.
Databáze:	OpenAIRE
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