A high frequency fully differential BiCMOS operational amplifier

Autor: A.N. Karanicolas, K.K. O, J.Y. Wang, H.-S. Lee, R.L. Reif
Rok vydání: 2002
Předmět:
Zdroj: IEEE Proceedings of the Custom Integrated Circuits Conference.
DOI: 10.1109/cicc.1990.124688
Popis: A BiCMOS differential operational amplifier designed for use in switched-capacitor circuits is presented. This BiCMOS op-amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45 degrees phase margin, and a slew rate of 150 V/ mu s. The op-amp is unity gain stable with 7 pF of capacitive loading. The circuit is operated from a +or-5-V power supply and dissipates 125 mW. The op-amp is integrated in the 3.0-GHz, 2-RGmm MIT BiCMOS process with an active die area of 1.0 mm*1.2 mm. >
Databáze: OpenAIRE