Development of Planar Schottky Diode on GaAs Substrate for Terahertz Applications
| Autor: | Sung-Chan Kim, Min Han, Won-Young Uhm, Keun-Kwan Ryu, Seok-Gyu Choi |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Equivalent series resistance business.industry Terahertz radiation Schottky barrier Schottky diode 020206 networking & telecommunications 02 engineering and technology Metal–semiconductor junction 01 natural sciences Diffusion capacitance Cutoff frequency Anode 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electrical Engineering and Technology. 11:1367-1371 |
| ISSN: | 1975-0102 |
| Popis: | In this paper, we demonstrate the planar Schottky diode on GaAs substrate for terahertz applications. A nanoscale dot and T-shaped disk has been developed as the anode for terahertz Schottky diode. The low parasitic elements of the nanoscale anode with T-shaped disk yield high cutoff frequency characteristic. The fabricated Schottky diode with anode diameter of 500 nm has series resistance of 21 Ω, ideality factor of 1.32, junction capacitance of 8.03 fF, and cutoff frequency of 944 GHz. |
| Databáze: | OpenAIRE |
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