Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
| Autor: | V. A. Kureshov, D. V. Peregudov, A. A. Marmalyuk, D. R. Sabitov, A. V. Mazalov, M. M. Zverev, A A Padalitsa, N. A. Gamov, V. B. Studenov, E. V. Zhdanova |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Electron energy
Materials science business.industry Statistical and Nonlinear Physics Heterojunction Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Transverse plane law Cathode ray Optoelectronics Electrical and Electronic Engineering Atomic physics business Driven element Current density Quantum well |
| Zdroj: | Quantum Electronics. 45:601-603 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe2015v045n07abeh015780 |
| Popis: | The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm{sup -2} at an electron energy of 18 keV. (lasers) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|