Mechanical light modulator fabricated on a silicon chip using SIMOX technology
| Autor: | B.A. Pailthorpe, W.R. Wiszniewski, R.E. Collins |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Materials science
Silicon business.industry Metals and Alloys Electro-optic modulator chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Signal Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wavelength chemistry.chemical_compound Optics Optical modulator chemistry Silicon nitride Electrical and Electronic Engineering business Instrumentation Beam (structure) |
| Zdroj: | Sensors and Actuators A: Physical. 43:170-174 |
| ISSN: | 0924-4247 |
| Popis: | This paper describes a light modulator fabricated on a silicon chip using SIMOX ( s eparation by im plantation of oxy gen) technology. The modular consists of a double supported beam made of layers of silicon nitride and mono-crystalline silicon, separated from a silicon substrate by the air gap. The voltage applied between the beam and the substrate bends the beam and the thickness of the gap is reduced. This alters the interference pattern of light illuminating the modulator. Based on this principle, light reflected by the device is modulated with the a.c. voltage signal which is driving the modulator beam. The modulator, with a beam 100 μm long, 5 μm wide and a total thickness of 0.43 μm, shows a 50% change in the reflected light intensity of the wavelength 514 nm, when biased with 20 V d.c. The fundamental resonant frequency of the modulator is 2.5 MHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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