Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers
| Autor: | Wen Yen Chen, Sheng Wei Lee, An Tai Chou, Wen-Hao Chang, Pan Shiu Chen, Zingway Pei, Tzu Min Hsu, Li Shyue Lai, S. C. Lu, M. J. Tsai |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Photoluminescence
Materials science Passivation business.industry Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Chemical vapor deposition Electroluminescence Condensed Matter Physics Emission intensity Surfaces Coatings and Films Device leakage Quantum dot Optoelectronics Quantum efficiency business |
| Zdroj: | Applied Surface Science. 224:165-169 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2003.08.106 |
| Popis: | Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5 μm are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 600 °C. The photoluminescence spectrum shows a 1.55 μm emission peak at room temperature. Low and high temperature (710 °C) oxides are used as passivation layers for the mesa surface. The high temperature oxidized samples exhibit low device leakage currents and a 2×10 −7 external quantum efficiency at room temperature. However, the high temperature process causes Si and Ge to inter-diffuse and makes the emission shift to 1.3 μm. The low temperature oxidation results in large device leakage current and lower emission intensity but leaves the emission peak at 1.5 μm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect