| Autor: |
Keh-Chung Wang, Feng-Ming Lee, Yu-Yu Lin, G.Y. Chen, Chun-Chang Lu, Po-Hao Tseng, K.Y. Hsieh, Meng-Chyi Wu, H.L. Lung, Dai-Ying Lee, Ming-Hsiu Lee, K.C. Hsu |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). |
| Popis: |
The forming voltage and temperature for creating the first filament in the RRAM device are found having impacts on RRAM reliability. The correlation between the forming temperature and the required voltage was evaluated on the WOx/TiOx RRAM devices, and then the reliability tests including cycling endurance and data retention were performed. A model was proposed to explain the results. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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