Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets
| Autor: | Han Pengde, Tianjing Li, Qisheng Wu, Jia Li, Qingle Shi, Xuejiao Zhang, Bai Sun, Jiao Baoxiang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Hexagonal crystal system Nanotechnology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Hydrothermal circulation 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biomaterials Protein filament Colloid and Surface Chemistry Resistive switching Optoelectronics Resistive switching memory 0210 nano-technology business Nanoscopic scale Electrical conductor |
| Zdroj: | Journal of Colloid and Interface Science. 505:148-153 |
| ISSN: | 0021-9797 |
| DOI: | 10.1016/j.jcis.2017.05.082 |
| Popis: | In this work, hexagonal MoSe2 nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe2 nanosheets was further investigated. We observed that MoSe2 nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe2 nanosheets is suggested to explain the memory behaviour. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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