| Autor: |
G. Fasol, C. J. Gibbings, C. G. Tuppen, Julian Darryn White, Michael A. Gell |
| Rok vydání: |
1991 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
STRACT We use Raman scattering to investigate direct gap Si/Ge superlattices for which the Si layers are in the form of biatomic sheets. We find a characteristic signal arising from the presence of the biatomic Si sheets. A range of samples have been investigated and 3-dimensional lattice dynamical calculations have been performed which pinpoint the Si layers as the origin of the signal. We illustrate how the signal may be used to characterise the quality of for example (Si)2/(Ge)6 superlattices grown at various substrate temperatures. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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