Role of high temperature chemistry in CVD (chemical vapor deposition) processing

Autor:	K. E. Spear, R. R. Kirkx
Rok vydání:	1990
Předmět:	Silicon boride chemistry.chemical_compound Chemical engineering Chemistry General Chemical Engineering Scientific method Environmental chemistry Deposition (phase transition) General Chemistry Chemical vapor deposition Combustion chemical vapor deposition Local equilibrium Plasma processing
Zdroj:	Pure and Applied Chemistry. 62:89-101
ISSN:	1365-3075 0033-4545
DOI:	10.1351/pac199062010089
Popis:	High temperature chemistry principles are examined as important tools for developing an understanding of chemical vapor deposition (CVD) systems, and for predicting deposition behavior. An attempt is made to qualitatively predict the complex interdependencies among controllable experimental parameters, process variables, and deposition properties. Examples of silicon boride deposition from Sib, BC13, and H2 mixtures are used to illustrate high temperature thermochemical modeling techniques which utilize the concept of local equilibrium.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c41a78a4b8a8d90c540fa936a2a129e2 https://doi.org/10.1351/pac199062010089 Zobrazit plný text záznamu