Observation of P donors on the Si(111) surface by scanning tunneling microscopy

Autor:	Thomas Trappmann, Christoph Sürgers, Hilbert von Löhneysen
Rok vydání:	1997
Předmět:	Materials science Dopant law Lattice (order) Scanning tunneling spectroscopy General Physics and Astronomy Nanotechnology Scanning tunneling microscope Spectroscopy Molecular physics Quantum tunnelling law.invention
Zdroj:	Europhysics Letters (EPL). 38:177-182
ISSN:	1286-4854 0295-5075
DOI:	10.1209/epl/i1997-00222-0
Popis:	We report on the individual observation of substitutional P donors on the reconstructed Si (111) 2 × 1 surface by means of scanning tunneling microscopy and tunneling spectroscopy. Depending on the scanning voltage, the dopants give rise to different features superimposed on the background lattice. This is explained by the influence of the charged P atom on the electronic surface-states resulting in a local band shift. The spatial arrangement of the donors obeys a statistical distribution, excluding significant clustering even at a P concentration of 6 × 1019 cm−3 which is far above the metal-insulator transition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c40ba8616bcba564e000ac10b0758c37 https://doi.org/10.1209/epl/i1997-00222-0 Zobrazit plný text záznamu