4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

Autor:	Konstantin Vassilevski, A.B. Horsfall, Irina P. Nikitina, Christopher Mark Johnson, Nicolas G. Wright
Rok vydání:	2010
Předmět:	Materials science business.industry Mechanical Engineering Electrical engineering Schottky diode Parallel plane Condensed Matter Physics Epitaxy Nickel silicide Mechanics of Materials Optoelectronics Breakdown voltage General Materials Science Wafer business Voltage Diode
Zdroj:	Materials Science Forum. :897-900
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.645-648.897
Popis:	4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩcm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient temperatures up to 200 °C.
Databáze:	OpenAIRE
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