Enhance the ESD Reliability of HV pLDMOS Transistors with the Embedded Horizontal SCR and Schottky Diode Techniques

Autor:	Zhi-Wei Liu, Shen-Li Chen, Sheng-Kai Fan, Jhong-Yi Lai, Xing-Chen Mai, Yu-Jie Chung
Rok vydání:	2021
Zdroj:	2021 IEEE International Future Energy Electronics Conference (IFEEC).
DOI:	10.1109/ifeec53238.2021.9661692
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c404165585d6a63ac61c5f5174e7a7f9 https://doi.org/10.1109/ifeec53238.2021.9661692 Zobrazit plný text záznamu