Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures
| Autor: | Christophe Longeaud, F. Dayoub, D. Mencaraglia, J. Reynaud, Jean-Paul Kleider |
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| Rok vydání: | 1996 |
| Předmět: |
Amorphous silicon
Materials science Condensed matter physics Annealing (metallurgy) chemistry.chemical_element Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicon nitride Aluminium Thermal Materials Chemistry Ceramics and Composites Density of states Quasistatic process |
| Zdroj: | Journal of Non-Crystalline Solids. :318-321 |
| ISSN: | 0022-3093 |
| Popis: | Thermal bias annealing experiments have been carried out on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures, and analyzed by quasistatic capacitance measurements. The quasistatic capacitance versus bias curves always show a well defined minimum which reflects the minimum in the density of states at the intercept between the conduction band tail and the deep defect distribution. Thermal bias annealing treatments lead to shifts of the capacitance versus bias curves of the same sign as the bias-anneal voltage, along with an increase of the capacitance minimum. These modifications can be qualitatively described by changes in the defect densities in the framework of the defect pool model. However, numerical calculations show that additional defects must be introduced to fully and quantitatively account for all experimental data. |
| Databáze: | OpenAIRE |
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