Diameter scalability of rolled-up In(Ga)As/GaAs nanotubes
| Autor: | Carsten Müller, Oliver G. Schmidt, Neng Yun Jin-Phillipp, Ch. Deneke |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Tube formation
Nanotube Tube diameter Materials science business.industry Bilayer Semiconductor materials Nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Monolayer Materials Chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Semiconductor Science and Technology. 17:1278-1281 |
| ISSN: | 0268-1242 |
| Popis: | Free-standing nanotubes are formed by rolling-up InGaAs/GaAs bilayers on a GaAs substrate. We present a systematic study of the tube diameter as a function of bilayer thicknesses. In our study we take into account that 2–4 monolayers of the top GaAs layer are consumed due to oxidation during the overall tube formation process. We find that a macroscopic continuum mechanical model can well describe the diameter of the nanotubes from 80 nm to 600 nm for nearly symmetric layers and from 21 nm to 550 nm for asymmetric bilayers. For thin symmetric layers the diameter is slightly smaller than predicted by theory. We find that the growth temperature significantly influences the nanotube diameter. |
| Databáze: | OpenAIRE |
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