Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown Si1-xGex quantum wells
| Autor: | U. Menczigar, M. Gail, J. Brunner, E. Friess, Gerhard Abstreiter |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
Materials science Photoluminescence Condensed matter physics Silicon Condensed Matter::Other Exciton Mineralogy chemistry.chemical_element Germanium Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Spectral line Inorganic Chemistry chemistry Materials Chemistry Luminescence Inorganic compound Quantum well |
| Zdroj: | Journal of Crystal Growth. 127:443-446 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(93)90657-i |
| Popis: | The influence of growth conditions on the photoluminescence of SiGe quantum wells is presented. Growth temperatures above 600°C are found to be a prerequisite for a good layer quality. The variation of growth rates between 0.25 and 1 aA/s, however, has no significant effect on the spectra. With optimized growth conditions, strong excitonic dominated quantum well luminescence with line widths below 5 meV has been achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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