Amorphous Nitride Alloys as Hosts for Rare-Earth Luminescent Ions

Autor:	M. E. Kordesch, Hugh H. Richardson, M. E. Little, M. L. Caldwell, C. M. Spalding
Rok vydání:	2001
Předmět:	Erbium Materials science Amorphous metal chemistry Silicon Band gap Doping Analytical chemistry chemistry.chemical_element Cathodoluminescence Nitride Amorphous solid
Zdroj:	MRS Proceedings. 667
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-667-g3.8
Popis:	Amorphous alloys of aluminum-gallium nitride doped with erbium (Er) were deposited at 300 K. The compositions ranged from 19% Al to 86% Al with optical band gaps varying linearly with composition from 3.4 eV (GaN) to 6.2 eV (AlN). The films were deposited on p-doped silicon (111) by a dc/rf dual gun system in a nitrogen/argon atmosphere at a pressure of 4.8 milli-Torr. After growth the films were thermally “activated” at 1070 K for 10 minutes in a nitrogen atmosphere. The cathodoluminescence emission intensities decreased linearly with Ga composition. This dependence suggests that the higher energy transitions in the Er ion are quenched by transitions to the conduction band of the alloys.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c3f0ce6ad02e437974709862c48f398c https://doi.org/10.1557/proc-667-g3.8 Zobrazit plný text záznamu Full text from SpringerLink