Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
| Autor: | Chien-Chung Hung, Yao-Feng Huang, Cheng-Tyng Yen, Fu-Jen Hsu, Hsiang-Ting Hung, Tzong-Liang Chen, Chwan-Ying Lee, Lurng-Shehng Lee |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Negative-bias temperature instability Materials science Subthreshold conduction business.industry Mechanical Engineering Oxide Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Subthreshold slope chemistry.chemical_compound chemistry Mechanics of Materials Gate oxide Subthreshold swing 0103 physical sciences MOSFET Optoelectronics General Materials Science 0210 nano-technology business Saturation (magnetic) |
| Zdroj: | Materials Science Forum. 897:533-536 |
| ISSN: | 1662-9752 |
| Popis: | The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% when the starting bias was-15V. The increase of subthreshold swing was caused by enhanced hole trapping which could be explained by the mechanism of positively charged interface states assisted hole trapping. The increase of subthreshold swing for MOSFET with improved gate oxide was reduced to about 40% when the starting bias was-20V and the value approached saturation for starting biases more negative than-10V, which can also be explained by the proposed mechanism. The increase of subthreshold swing for MOSFET with improved oxide was not sensitive to the temperature. The increase of subthreshold swing at 175°C was only 5%~7% higher than that at room temperature. |
| Databáze: | OpenAIRE |
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