Intermediate phase with orthorhombic symmetry displacement patterns in epitaxial PbZrO3 thin films at high temperatures
| Autor: | Arvind Dasgupta, Iu. A. Bronwald, Maria A. Kniazeva, G. A. Lityagin, Ran Gao, Daria Andronikova, A. V. Filimonov, R. G. Burkovsky, Francesco Carlà, Maciej Jankowski |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Diffraction Phase transition Materials science Analytical chemistry 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Phase (matter) 0103 physical sciences X-ray crystallography Thin film 0210 nano-technology Layer (electronics) |
| Zdroj: | Ferroelectrics. 533:26-34 |
| ISSN: | 1563-5112 0015-0193 |
| Popis: | Antiferroelectric PbZrO3 epitaxial thin film with thickness of 50 nm grown on the SrTiO3 substrate with SrRuO3 buffer layer was studied by Grazing incidence X-ray diffraction in a wide range of tem... |
| Databáze: | OpenAIRE |
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