MIS transistor based on PbSnTe : In film with an Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- gate dielectric-=SUP=-*-=/SUP=

Autor:	null Tereshchenko O. E., null Suprun S. P., null Paschin N. S., null Sidorov G. Yu., null Neizvestny I. G., null Matyushenko E. V., null Gorshkon D. V., null Golyashov V. A., null Klimov A. E.
Rok vydání:	2022
Zdroj:	Semiconductors. 56:182
ISSN:	1726-7315
Popis:	Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe : In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate-controlled characteristics of the MIST at [BT=4.2 K have been investigated. It is shown that in MIST based on PbSnTe : In films with n~1017 cm-3 the modulation of the channel current reaches 7-8% in the range of gate voltages -10 Vgategate are considered. Keywords: solid solution PbSnTe : In, field effect, MIS structure, Al2O3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c3c9f95971ff9c3623faea7887af76ec https://doi.org/10.21883/sc.2022.02.53273.30 Zobrazit plný text záznamu