Optical properties of InGaN based multiple quantum wells on low threading dislocation density GaN films fabricated by air‐bridged lateral epitaxial growth

Autor:	Akihiko Ishibashi, Yasutoshi Kawaguchi, Tsunemasa Taguchi, Gaku Sugahara, Yoichi Yamada, Toshiya Yokogawa
Rok vydání:	2003
Předmět:	Materials science Photoluminescence Condensed matter physics business.industry Multiple quantum Doping Radiative transfer Threading (manufacturing) Optoelectronics Dislocation Epitaxy business Recombination
Zdroj:	physica status solidi (c). :2116-2119
ISSN:	1610-1634
DOI:	10.1002/pssc.200303491
Popis:	We have systematically studied radiative and nonradiative recombination processes by time-resolved photoluminescence (TR-PL) measurements in InGaN based multiple quantum wells (MQWs) with various In content or Si doping conditions of barrier layers on low-threading dislocaton (TD) density GaN films fabricated by (ABLEG). Temperature dependences of PL decay times and PL intensities indicate that the localization of photo-excited carriers and the nonradiative recombination process are suppressed by using Si-doped InGaN barriers in InGaN based MQWs on low TD density ABLEG-GaN films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c3c97249a5e211e49d2ed6e76141fd57 https://doi.org/10.1002/pssc.200303491 Zobrazit plný text záznamu Plný text