Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers
| Autor: | A G Zhuravlev, V.L. Alperovich |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Photocurrent
Materials science Relaxation (NMR) General Physics and Astronomy Quantum yield Thermionic emission 02 engineering and technology Surfaces and Interfaces General Chemistry Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Surfaces Coatings and Films Overlayer Band bending Electron affinity 0103 physical sciences 010306 general physics 0210 nano-technology |
| Zdroj: | Applied Surface Science. 461:10-16 |
| ISSN: | 0169-4332 |
| Popis: | Photoreflectance and photoemission quantum yield spectroscopies are used for the experimental study of direct photoemission, photon-enhanced thermionic emission (PETE), surface band bending and photovoltage, effective electron affinity, and probabilities of electron escape into a vacuum under cesium deposition on the Ga-rich p-GaAs(0 0 1) surface and the subsequent structural relaxation in the absorbed overlayer. The relaxational decrease of the direct photoemission and PETE at small Cs coverages is caused by the band bending decrease, while the photocurrent relaxational increase at large coverages is due to electron affinity relaxation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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