Autor: |
Zhang Shuyi, Qiu Shi Gao, Zhao Qiu Wang |
Rok vydání: |
1992 |
Předmět: |
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Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 62:400-403 |
ISSN: |
0168-583X |
Popis: |
A 1 MHz photoacoustic system is used to measure the doses of boron, phosphorus and arsenic ions implanted into silicon wafers over the range of 10 11 to 10 16 ions/cm 2 . The amorphization and residual damage produced by ion implantation seem to contribute principally to the photoacoustic signal. Experimental results and numerical simulations with a 1-dimensional model illuminate that the photoacoustic signal should rise suddenly when a buried disordered layer is present. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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