Ion implantation measurements with a noncontact nondestructive high frequency photoacoustic technique

Autor:	Zhang Shuyi, Qiu Shi Gao, Zhao Qiu Wang
Rok vydání:	1992
Předmět:	inorganic chemicals Nuclear and High Energy Physics Range (particle radiation) Materials science business.industry Analytical chemistry chemistry.chemical_element Signal Ion Ion implantation chemistry Optoelectronics Wafer business Boron Instrumentation Layer (electronics) Arsenic
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 62:400-403
ISSN:	0168-583X
Popis:	A 1 MHz photoacoustic system is used to measure the doses of boron, phosphorus and arsenic ions implanted into silicon wafers over the range of 10 11 to 10 16 ions/cm 2 . The amorphization and residual damage produced by ion implantation seem to contribute principally to the photoacoustic signal. Experimental results and numerical simulations with a 1-dimensional model illuminate that the photoacoustic signal should rise suddenly when a buried disordered layer is present.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c3bb316cdfe2095f2ea27cf0571bc44c https://doi.org/10.1016/0168-583x(92)95265-s Zobrazit plný text záznamu