Inverted quantum-dot light-emitting diodes with solution-processed aluminium–zinc oxide as a cathode buffer

Autor:	Jun-Ho Youn, Jin Jang, Gijun Seo, Hyo-Min Kim
Rok vydání:	2013
Předmět:	Materials science business.industry Doping Analytical chemistry Oxide chemistry.chemical_element General Chemistry Zinc Conductivity Cathode law.invention chemistry.chemical_compound chemistry law Quantum dot Aluminium Materials Chemistry Optoelectronics business Light-emitting diode
Zdroj:	J. Mater. Chem. C. 1:1567-1573
ISSN:	2050-7534 2050-7526
DOI:	10.1039/c2tc00339b
Popis:	We report an inverted structure of quantum-dot light emitting diodes (QLEDs) with a metal oxide as a cathode buffer. The Al doped zinc oxide (AZO) with Al concentration from 0 to 30% was used as a charge transport layer in QLEDs which were processed at the temperature of 225 °C. It is found that the conductivity of AZO decreases with increasing Al concentration, but the luminance intensity increases from 6380 to 26 700 cd m−2. The current and power efficiencies at 1000 cd m−2 increase from 3.03 to 4.63 cd A−1 and 2.75 to 3.64 lm W−1, respectively, as the Al concentration increases from 0 to 30%. The luminance intensity for the QLED with 30% AZO increases further to 31 030 cd m−2 and the current efficiency to 5.21 cd A−1 by increasing the thickness of the electron transport layer from 33 to 50 nm. It is concluded therefore that a solution processed AZO can be an effective cathode buffer for an inverted structure of QLEDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c3b9ee9b9ea3c8ee3efb48ddcc1e149e https://doi.org/10.1039/c2tc00339b Zobrazit plný text záznamu