Defect and impurity effects on the initial growth of Ag on Si(111)
| Autor: | J. F. Wendelken, J.‐K. Zuo |
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| Rok vydání: | 1991 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1539-1544 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.577658 |
| Popis: | Step and impurity effects on the initial growth of a thin film have been demonstrated in the ( 7/8 × 7/8 )R30° (or simply 7/8 ) domain growth of Ag on Si(111) using high angular resolution low‐energy electron diffraction. Anisotropy in the 7/8 domain shape and growth during deposition are found on the stepped Si(111) with the preferential growth along the step edge direction. The 7/8 superlattice grows with coverage principally by domain coalescence at the temperature T∼450 °C and is self‐similar at different coverages (scaling) as observed on a flat Si(111). The size distribution is shown to follow a Gamma distribution by a simple model calculation. A dramatic change in the growth mechanism is observed when oxygen impurities [≤0.02 monolayer] appear. The 7/8 domains in the presence of impurities grow with coverage more randomly and isotropically in contrast with the step edge effects and coalescence is inhibited. As a result, the 7/8 superlattice stays in a microdomain morphology without long range order. |
| Databáze: | OpenAIRE |
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