Rapid Processing of Boron Oxygen Defects
| Autor: | Hallam, B., Hamer, P., Nampalli, N., Abbott, M., Kim, M., Chen, D., Azmi, A., Gorman, N., Li, H., Lu, P.H.D., Wang, S., Ciesla, A., Chan, C., Payne, D., Mai, L., Ji, J., Wenham, S.R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20152015-2do.16.4 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 531-535 This paper discusses mechanisms to allow a rapid mitigation of carrier-induced degradation in borondoped Czochralski silicon, and in particular, the implications for mitigating such degradation in a production environment. A mathematical model is used to determine the required time to effectively mitigate carrier-induced degradation at different temperatures based on experimental data. Using an improved UNSW developed hydrogenation process, less than 0.1% absolute loss in efficiency can be obtained within a 3 s process, compared to approximately 40 s for more conventional approaches. This acceleration of carrier-induced degradation mitigation suggests that such a process could be implemented into the cool-down section of existing belt furnaces. |
| Databáze: | OpenAIRE |
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