MOVPE Preparation of Double-Layer Stepped Silicon(100) for III-V-on-Silicon Solar Cells
| Autor: | Kleinschmidt, P., Döscher, H., Supplie, O., Brückner, S., Hannappel, T. |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
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| DOI: | 10.4229/27theupvsec2012-1ao.9.1 |
| Popis: | 27th European Photovoltaic Solar Energy Conference and Exhibition; 67-69 The concept of III-V based high efficiency solar cells on silicon substrates relies on suitable Si(100) preparation prior to III-V-on-Si heteroepitaxy. The method of choice for large scale III-V growth is metalorganic vapour phase epitaxy (MOVPE), due to excellent control of material composition and quality and scalability of production. One of the fundamental problems for III-V-on-Si growth relates to the difference in atomic structure which manifests itself in the polarity of the III-V material as opposed to the non-polar nature of the silicon substrate. As a consequence, the step structure of the substrate is vital for defect-free heteroepitaxy, with single layer steps on the substrate initiating anti-phase disorder in the III-V material, while a double-layer stepped substrate in principle enables anti-phase-free III-V growth. While UHV preparation of double-layer stepped Si(100) is well established, less is known about comparable preparation methods in the hydrogen-based MOVPE environment. We have investigated step formation on Si(100) in this environment and have established suitable preparation procedures for double-layer steps on Si(100) substrates with different misorientations. |
| Databáze: | OpenAIRE |
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