Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy
| Autor: | Trevor P. Martin, Michael J. Uren, Gernot Riedel, James W Pomeroy, J.O. Maclean, Martin Kuball, K.P. Hilton, Andrei Sarua, David J. Wallis |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Semiconductor device Substrate (electronics) High-electron-mobility transistor Temperature measurement Electronic Optical and Magnetic Materials symbols.namesake symbols Sapphire Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Raman spectroscopy |
| Zdroj: | IEEE Electron Device Letters. 28:86-89 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2006.889215 |
| Popis: | We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of ~10 and ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated |
| Databáze: | OpenAIRE |
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