Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC
| Autor: | A.W. Clock, Kenneth A. Jones, Mario Ghezzo, A. Elasser, Nicolas A. Papanicolaou, Mulpuri V. Rao, O. W. Holland, J.A. Mittereder, Jesse B. Tucker |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Wide-bandgap semiconductor Analytical chemistry Carrier lifetime Atmospheric temperature range Acceptor Electronic Optical and Magnetic Materials Reverse leakage current Ion implantation Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 48:2665-2670 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.974687 |
| Popis: | Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n/sup +/-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700/spl deg/C and annealed at 1650/spl deg/C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25/spl deg/C-400/spl deg/C, and reverse recovery transient behavior over the temperature range 25/spl deg/C-200/spl deg/C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5/spl times/10/sup -8/ A/cm/sup 2/ at a reverse bias of -20 V and a carrier lifetime of 7.4 ns. |
| Databáze: | OpenAIRE |
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