GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Autor:	K. K. Ng, B. Yang, J. Kwo, Peide D. Ye, S. N. G. Chu, J. Bude, Joseph Petrus Mannaerts, S. Nakahara, G. D. Wilk, Minghwei Hong, H.-J. Gossmann
Rok vydání:	2003
Předmět:	Atomic layer deposition Materials science Physics and Astronomy (miscellaneous) business.industry Gate oxide Transconductance Gate dielectric MOSFET Optoelectronics Biasing Field-effect transistor business High-κ dielectric
Zdroj:	Applied Physics Letters. 83:180-182
ISSN:	1077-3118 0003-6951
Popis:	A GaAs metal–oxide–semiconductor field-effect transistor (MOSFET) with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression is one of the key factors in downsizing field-effect transistors. A 1 μm gate-length depletion-mode n-channel GaAs MOSFET with an Al2O3 gate oxide thickness of 8 nm, an equivalent SiO2 thickness of ∼3 nm, shows a broad maximum transconductance of 120 mS/mm and a drain current of more than 400 mA/mm. The device shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c38df0abd5ce537a068fd201ea40a4a9 https://doi.org/10.1063/1.1590743 Zobrazit plný text záznamu