Silicon Doping of Gallium Nitride Using Ditertiarybutylsilane

Autor:	Anna Widdowson, C. Liu, S. Rushworth, M.G. Cheong, C. J. Deatcher, Ian Watson, L. M. Smith
Rok vydání:	2004
Předmět:	Silicon business.industry Process Chemistry and Technology Doping Inorganic chemistry chemistry.chemical_element Gallium nitride Surfaces and Interfaces General Chemistry Nitride Epitaxy chemistry.chemical_compound chemistry Optoelectronics Gallium business
Zdroj:	Chemical Vapor Deposition. 10:187-190
ISSN:	1521-3862 0948-1907
DOI:	10.1002/cvde.200304171
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c38271f91c2d5101ebdc1c820a7ffd02 https://doi.org/10.1002/cvde.200304171 Zobrazit plný text záznamu Plný text