Fundamentals of EUV resist-inorganic hardmask interactions
| Autor: | Krystelle Lionti, Teddie Magbitang, Martin Glodde, Anuja De Silva, Dario L. Goldfarb, Nelson Felix, Indira Sheshadri |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science Extreme ultraviolet lithography Delamination Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Characterization (materials science) chemistry.chemical_compound chemistry Stack (abstract data type) Resist Extreme ultraviolet 0103 physical sciences Wafer 0210 nano-technology |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2257933 |
| Popis: | High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin ( |
| Databáze: | OpenAIRE |
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