A universal relation between conductivity and field-effect mobility in doped amorphous organic semiconductors
| Autor: | Adam R. Brown, Anita Pomp, Edsko Enno Havinga, Dago M. de Leeuw |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Condensed matter physics
Dopant business.industry Stereochemistry Mechanical Engineering Doping Metals and Alloys Field effect Condensed Matter Physics Tetracyanoquinodimethane Electronic Optical and Magnetic Materials Amorphous solid Organic semiconductor chemistry.chemical_compound Semiconductor chemistry Mechanics of Materials Materials Chemistry Field-effect transistor business |
| Zdroj: | Synthetic Metals. 68:65-70 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/0379-6779(94)90148-1 |
| Popis: | We have fabricated metal-insulator-semiconductor field-effect transistors (MISFETs) from tetracyanoquinodimethane (TCNQ) doped with tetrathiofulvalene (TTF) and poly(β′-dodecyloxy(-α,α′−α′,α″-)terthienyl) (polyDOT3) doped with 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). Experimentally we find that the measured field-effect mobility strongly increases with increasing conductivity of the organic semiconductor. Moreover, by comparison with literature data on a variety of amorphous organic semiconductors, we propose that these two quantities and the dopant concentration may be linked by a universal empirical relationship. A tentative explanation based on the notion of electrical transport being dominated by hopping between localized states is given. A consequence is that large on/off ratios and high mobilities are not to be expected simultaneously in conventional MISFETs constructed from amorphous organic semiconductors. |
| Databáze: | OpenAIRE |
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