Thin film diamond metal-insulator field effect transistor for high temperature applications
| Autor: | Paul R. Chalker, Colin Johnston, Simon S.M. Chan, Richard B. Jackman, Lisa Y.S. Pang |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Schottky barrier Transconductance Diamond engineering.material Condensed Matter Physics Mechanics of Materials engineering Optoelectronics General Materials Science Field-effect transistor Metal insulator Thin film business MISFET Leakage (electronics) |
| Zdroj: | Materials Science and Engineering: B. 46:124-128 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(96)01946-0 |
| Popis: | bstract A high temperature depletion-mode metal-insulator field effect transistor (MISFET) has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device was successfully operated at 300 °C with low gate leakage currents, displaying pinch-off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS mm −1 has been measured, the highest reported value to date for this type of device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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