Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior

Autor:	Liesbet Witters, Jerome Mitard, Eddy Simoen, Xiaofei Jia, Jiahao Liu, Naoto Horiguchi, Pan Zhao, Liang He, Nadine Collaert, Hua Chen, Yahui Su, Cor Claeys, Hiroaki Arimura
Rok vydání:	2019
Předmět:	010302 applied physics Noise power Materials science Condensed matter physics Spectral density 01 natural sciences Noise (electronics) Electronic Optical and Magnetic Materials Threshold voltage Gate oxide 0103 physical sciences MOSFET Work function Electrical and Electronic Engineering Metal gate
Zdroj:	IEEE Transactions on Electron Devices. 66:1050-1056
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2018.2883529
Popis:	Low-frequency noise is used to estimate the quality of the gate stack for planar Ge nMOSFETs with different effective work function metals and cap layers. It is shown that replacing TiN by a TiAl-based metal gate will induce a significant decline of the threshold voltage ${V}_{T}$ and noise power spectral density, indicating the introduction of Al will induce an advantageous effect on the trap density in the underlying HfO2. Meanwhile, the application of a LaO x cap tends to reduce ${V}_{T}$ and the trap density in the gate oxide, which could attribute to the La in-diffusion in the gate stack. The 1/f noise analysis shows that the noise could mainly be associated with number fluctuations and correlated mobility fluctuations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c34823696e1bb04ef00aa880645a5a72 https://doi.org/10.1109/ted.2018.2883529