A numerical model for two-dimensional transient simulation of amorphous silicon thin-film transistors
| Autor: | S.G. Chamberlain, J.R.F. McMacken |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Amorphous silicon
Steady state Materials science Transistor Trapping Mechanics Computer Graphics and Computer-Aided Design Amorphous solid law.invention chemistry.chemical_compound Distribution function chemistry law Thin-film transistor Electronic engineering Transient (oscillation) Electrical and Electronic Engineering Software |
| Zdroj: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 11:629-637 |
| ISSN: | 0278-0070 |
| DOI: | 10.1109/43.127624 |
| Popis: | A model based on a linearized solution of the Shockley-Read-Hall trapping expressions is presented. It allows these equations to be eliminated from the system matrix. This results in significantly reduced memory requirements and execution times. To illustrate the approach, the switch-on and switch-off transients of a thin-film transistor were simulated. These results are compared with ones obtained from the full two-dimensional transient numerical model. It is shown that the linearized model can simulate a wide variety of device behavior, providing close agreement with the full model at a fraction of the cost. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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