Photoelectric and passivation properties of atomic layer deposited gradient AZO thin film
| Autor: | Jia-heng Feng, Bin Zhao, Bing Wang, Yi Jia, Li-dan Tang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Passivation Analytical chemistry 02 engineering and technology Carrier lifetime Photoelectric effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic layer deposition Electrical resistivity and conductivity 0103 physical sciences Transmittance General Materials Science Electrical and Electronic Engineering Thin film 0210 nano-technology Layer (electronics) |
| Zdroj: | Superlattices and Microstructures. 102:314-322 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2016.12.053 |
| Popis: | Gradient Al-doped ZnO (AZO) thin films were deposited at 150 °C by atomic layer deposition (ALD) with different Al concentration gradient, and their photoelectric and passivation properties were investigated. With increasing Al concentration gradient from 0.09 to 1.21%/nm, Hall-effect showed that the resistivity of gradient AZO thin films deteriorates. The minimal resistivity (2.81 × 10−3 Ω cm), the maximum mobility (9.03 cm2/Vs) and the maximum carrier concentration (2.46 × 1020 cm−3) were obtained at 0.09%/nm Al concentration gradient. The average transmittance of all the gradient AZO films can be more than 85% in the visible region. In addition, gradient AZO thin films demonstrated excellent passivation properties. The maximum minority carrier lifetime (120.6 μs) and the minimal surface recombination velocity (≤208.3 cm/s) were obtained at 0.71%/nm Al concentration gradient. |
| Databáze: | OpenAIRE |
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