Study of Back-Channel Defect States on Bottom-Gate IGZO TFTs Using Capacitance-Voltage Analysis

Autor:	Karl D. Hirschman, Robert George Manley, N. Walsh, Tarun Mudgal, Nicholas Edwards
Rok vydání:	2015
Předmět:	Materials science Passivation Silicon dioxide business.industry Annealing (metallurgy) chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Electrical resistivity and conductivity Oxidizing agent Optoelectronics Thin film business Electrical conductor
Zdroj:	MRS Proceedings. 1731
ISSN:	1946-4274 0272-9172
DOI:	10.1557/opl.2015.173
Popis:	This work investigates the quality of back-channel passivation applied to sputter-deposited IGZO bottom-gate TFTs. Passivation materials investigated were alumina, silicon dioxide, and B-staged bisbenzocyclobutene-based (BCB) resins. Sputtered quartz and PECVD (TEOS) SiO2 rendered the IGZO material highly conductive (ρ < 0.01 Ω·cm), with subsequent annealing in oxidizing ambient unable to restore a high-resistivity state. Appropriate channel resistivity was restored on devices passivated with electron-beam evaporated alumina and spin-coated BCB when followed by annealing in air. Alumina passivated devices demonstrated improved stability; however slight distortions in measured I-V and C-V characteristics were observed. TCAD simulation was used to develop an IGZO material/device model, with results indicating the significant presence of oxygen-vacancy (OV) interface traps and negative fixed charge remaining at the back-channel.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c34596580e2be371771b898b38eac22d https://doi.org/10.1557/opl.2015.173 Zobrazit plný text záznamu Full text from SpringerLink