Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films

Autor:	M. J. Bevan, Luigi Colombo, M. J. Kim, Robert M. Wallace, Manuel Quevedo-Lopez, Mark R. Visokay, A. LiFatou, M. El-Bouanani, Bruce E. Gnade
Rok vydání:	2002
Předmět:	Secondary ion mass spectrometry Materials science Polycrystalline silicon Physics and Astronomy (miscellaneous) Dopant Annealing (metallurgy) Gate dielectric engineering Analytical chemistry Grain boundary Dielectric engineering.material Isotropic etching
Zdroj:	Applied Physics Letters. 81:1609-1611
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1502910
Popis:	Phosphorus and arsenic penetration studies from P- and As-doped polycrystalline silicon through HfSixOy and HfSixOyNz (18% N) alternate gate dielectric candidates films into Si(100) are presented using a combination of chemical etching and secondary ion mass spectrometry (SIMS). Penetration is observed through HfSixOy after 1050 and 1000 °C rapid thermal annealing for As and P, respectively. In contrast, As or P dopant penetration is at the SIMS limit of detection for HfSixOyNz films. By modeling the P and As depth profiles in the Si substrate, their respective diffusivities in HfSixOy are higher than the corresponding diffusivities in SiO2. The enhanced dopant diffusivity observed in HfSixOy is proposed to be due to grain boundary formation in the dielectric after crystallization from annealing.
Databáze:	OpenAIRE
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